Quantitative method for estimating characteristics of conductive filament in ReRAM

A quantitative 3D conductive filament model for ReRAM is developed based on a hopping percolation theory without any fitting parameter. According to the theory, the dimensions and oxygen vacancy concentration of the conductive filament are functions of the resistance distribution. We perform Monte C...

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Main Authors: Zhiqiang Wei, Yasuhara, Ryutaro, Katayama, Koji, Mikawa, Takumi, Ninomiya, Takeki, Muraoka, Shunsaku
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Electrodes
filament
percolation
Probability
ReRAM
Resistance
Solid modeling
Switches
Three-dimensional displays
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Yasuhara, Ryutaro
Katayama, Koji
Mikawa, Takumi
Ninomiya, Takeki
Muraoka, Shunsaku
description A quantitative 3D conductive filament model for ReRAM is developed based on a hopping percolation theory without any fitting parameter. According to the theory, the dimensions and oxygen vacancy concentration of the conductive filament are functions of the resistance distribution. We perform Monte Carlo simulations for calculating the resistance distribution and derive the physical parameters for quantitative simulation based on the relation between resistivity and the oxygen concentration of TaO x . The dimensions and oxygen vacancy concentration are estimated by simulating the resistance distribution. The estimated conductive filament diameters are corroborated by EBAC and TEM observations.
doi_str_mv 10.1109/ISCAS.2014.6865267
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fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_6865267</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6865267</ieee_id><sourcerecordid>6865267</sourcerecordid><originalsourceid>FETCH-LOGICAL-i241t-9d135752790cbfaee25dd0b050e1dbda40e519b0aedba23d2bd29573fafbb4313</originalsourceid><addsrcrecordid>eNotkMFKAzEURaMoWGt_QDf5gakvL8lksixFa6EitrouyeTFRjozMpMK_r1Fu7pw4B4ul7FbAVMhwN4vN_PZZoog1LSsSo2lOWMTayqhjLVSSVTnbIRCV4XQqC_YCNCIQknAK3Y9DJ8ACFDiiK1fD67NKbucvok3lHdd4LHrOQ05NUfafvB653pXZ-rTkdUD7yKvuzYc6r9OTHvXUJt5avma1rPnG3YZ3X6gySnH7P3x4W3-VKxeFsv5bFUkVCIXNgipjUZjofbREaEOATxoIBF8cApIC-vBUfAOZUAf0Gojo4veKynkmN39exMRbb_649z-Z3u6Q_4CW9JTuA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Quantitative method for estimating characteristics of conductive filament in ReRAM</title><source>IEEE Xplore All Conference Series</source><creator>Zhiqiang Wei ; Yasuhara, Ryutaro ; Katayama, Koji ; Mikawa, Takumi ; Ninomiya, Takeki ; Muraoka, Shunsaku</creator><creatorcontrib>Zhiqiang Wei ; Yasuhara, Ryutaro ; Katayama, Koji ; Mikawa, Takumi ; Ninomiya, Takeki ; Muraoka, Shunsaku</creatorcontrib><description>A quantitative 3D conductive filament model for ReRAM is developed based on a hopping percolation theory without any fitting parameter. According to the theory, the dimensions and oxygen vacancy concentration of the conductive filament are functions of the resistance distribution. We perform Monte Carlo simulations for calculating the resistance distribution and derive the physical parameters for quantitative simulation based on the relation between resistivity and the oxygen concentration of TaO x . The dimensions and oxygen vacancy concentration are estimated by simulating the resistance distribution. The estimated conductive filament diameters are corroborated by EBAC and TEM observations.</description><identifier>ISSN: 0271-4302</identifier><identifier>EISSN: 2158-1525</identifier><identifier>EISBN: 9781479934324</identifier><identifier>EISBN: 1479934321</identifier><identifier>EISBN: 1479934313</identifier><identifier>EISBN: 9781479934317</identifier><identifier>DOI: 10.1109/ISCAS.2014.6865267</identifier><language>eng</language><publisher>IEEE</publisher><subject>Conductivity ; Electrodes ; filament ; percolation ; Probability ; ReRAM ; Resistance ; Solid modeling ; Switches ; Three-dimensional displays</subject><ispartof>2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2014, p.842-845</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6865267$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,27923,54553,54930</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6865267$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhiqiang Wei</creatorcontrib><creatorcontrib>Yasuhara, Ryutaro</creatorcontrib><creatorcontrib>Katayama, Koji</creatorcontrib><creatorcontrib>Mikawa, Takumi</creatorcontrib><creatorcontrib>Ninomiya, Takeki</creatorcontrib><creatorcontrib>Muraoka, Shunsaku</creatorcontrib><title>Quantitative method for estimating characteristics of conductive filament in ReRAM</title><title>2014 IEEE International Symposium on Circuits and Systems (ISCAS)</title><addtitle>ISCAS</addtitle><description>A quantitative 3D conductive filament model for ReRAM is developed based on a hopping percolation theory without any fitting parameter. According to the theory, the dimensions and oxygen vacancy concentration of the conductive filament are functions of the resistance distribution. We perform Monte Carlo simulations for calculating the resistance distribution and derive the physical parameters for quantitative simulation based on the relation between resistivity and the oxygen concentration of TaO x . The dimensions and oxygen vacancy concentration are estimated by simulating the resistance distribution. The estimated conductive filament diameters are corroborated by EBAC and TEM observations.</description><subject>Conductivity</subject><subject>Electrodes</subject><subject>filament</subject><subject>percolation</subject><subject>Probability</subject><subject>ReRAM</subject><subject>Resistance</subject><subject>Solid modeling</subject><subject>Switches</subject><subject>Three-dimensional displays</subject><issn>0271-4302</issn><issn>2158-1525</issn><isbn>9781479934324</isbn><isbn>1479934321</isbn><isbn>1479934313</isbn><isbn>9781479934317</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2014</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkMFKAzEURaMoWGt_QDf5gakvL8lksixFa6EitrouyeTFRjozMpMK_r1Fu7pw4B4ul7FbAVMhwN4vN_PZZoog1LSsSo2lOWMTayqhjLVSSVTnbIRCV4XQqC_YCNCIQknAK3Y9DJ8ACFDiiK1fD67NKbucvok3lHdd4LHrOQ05NUfafvB653pXZ-rTkdUD7yKvuzYc6r9OTHvXUJt5avma1rPnG3YZ3X6gySnH7P3x4W3-VKxeFsv5bFUkVCIXNgipjUZjofbREaEOATxoIBF8cApIC-vBUfAOZUAf0Gojo4veKynkmN39exMRbb_649z-Z3u6Q_4CW9JTuA</recordid><startdate>201406</startdate><enddate>201406</enddate><creator>Zhiqiang Wei</creator><creator>Yasuhara, Ryutaro</creator><creator>Katayama, Koji</creator><creator>Mikawa, Takumi</creator><creator>Ninomiya, Takeki</creator><creator>Muraoka, Shunsaku</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201406</creationdate><title>Quantitative method for estimating characteristics of conductive filament in ReRAM</title><author>Zhiqiang Wei ; Yasuhara, Ryutaro ; Katayama, Koji ; Mikawa, Takumi ; Ninomiya, Takeki ; Muraoka, Shunsaku</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i241t-9d135752790cbfaee25dd0b050e1dbda40e519b0aedba23d2bd29573fafbb4313</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Conductivity</topic><topic>Electrodes</topic><topic>filament</topic><topic>percolation</topic><topic>Probability</topic><topic>ReRAM</topic><topic>Resistance</topic><topic>Solid modeling</topic><topic>Switches</topic><topic>Three-dimensional displays</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhiqiang Wei</creatorcontrib><creatorcontrib>Yasuhara, Ryutaro</creatorcontrib><creatorcontrib>Katayama, Koji</creatorcontrib><creatorcontrib>Mikawa, Takumi</creatorcontrib><creatorcontrib>Ninomiya, Takeki</creatorcontrib><creatorcontrib>Muraoka, Shunsaku</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhiqiang Wei</au><au>Yasuhara, Ryutaro</au><au>Katayama, Koji</au><au>Mikawa, Takumi</au><au>Ninomiya, Takeki</au><au>Muraoka, Shunsaku</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Quantitative method for estimating characteristics of conductive filament in ReRAM</atitle><btitle>2014 IEEE International Symposium on Circuits and Systems (ISCAS)</btitle><stitle>ISCAS</stitle><date>2014-06</date><risdate>2014</risdate><spage>842</spage><epage>845</epage><pages>842-845</pages><issn>0271-4302</issn><eissn>2158-1525</eissn><eisbn>9781479934324</eisbn><eisbn>1479934321</eisbn><eisbn>1479934313</eisbn><eisbn>9781479934317</eisbn><abstract>A quantitative 3D conductive filament model for ReRAM is developed based on a hopping percolation theory without any fitting parameter. According to the theory, the dimensions and oxygen vacancy concentration of the conductive filament are functions of the resistance distribution. We perform Monte Carlo simulations for calculating the resistance distribution and derive the physical parameters for quantitative simulation based on the relation between resistivity and the oxygen concentration of TaO x . The dimensions and oxygen vacancy concentration are estimated by simulating the resistance distribution. The estimated conductive filament diameters are corroborated by EBAC and TEM observations.</abstract><pub>IEEE</pub><doi>10.1109/ISCAS.2014.6865267</doi><tpages>4</tpages></addata></record>
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subjects Conductivity
Electrodes
filament
percolation
Probability
ReRAM
Resistance
Solid modeling
Switches
Three-dimensional displays
title Quantitative method for estimating characteristics of conductive filament in ReRAM
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T09%3A13%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Quantitative%20method%20for%20estimating%20characteristics%20of%20conductive%20filament%20in%20ReRAM&rft.btitle=2014%20IEEE%20International%20Symposium%20on%20Circuits%20and%20Systems%20(ISCAS)&rft.au=Zhiqiang%20Wei&rft.date=2014-06&rft.spage=842&rft.epage=845&rft.pages=842-845&rft.issn=0271-4302&rft.eissn=2158-1525&rft_id=info:doi/10.1109/ISCAS.2014.6865267&rft.eisbn=9781479934324&rft.eisbn_list=1479934321&rft.eisbn_list=1479934313&rft.eisbn_list=9781479934317&rft_dat=%3Cieee_CHZPO%3E6865267%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i241t-9d135752790cbfaee25dd0b050e1dbda40e519b0aedba23d2bd29573fafbb4313%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6865267&rfr_iscdi=true