A 60-dB Gain OTA operating at 0.25-V power supply in 130-nm digital CMOS process

This paper presents a high gain bulk-driven Miller OTA operating at just 0.25-V power supply in a 130-nm digital CMOS process. The amplifier operates in weak-inversion region with input bulk-driven differential pair with negative resistance source degeneration. In addition, distributed layout config...

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Bibliographic Details
Main Authors: Ferreira, Luis H. C., Sonkusale, Sameer R.
Format: Conference Proceeding
Language:English
Subjects:
Bulk-driven Miller OTA
CMOS integrated circuits
CMOS process
halo-implanted transistors
Impedance
Layout
low-power applications
low-voltage
Power supplies
Transconductance
Transistors
weak inversion
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Summary:This paper presents a high gain bulk-driven Miller OTA operating at just 0.25-V power supply in a 130-nm digital CMOS process. The amplifier operates in weak-inversion region with input bulk-driven differential pair with negative resistance source degeneration. In addition, distributed layout configuration is used for all transistors to mitigate the effect of halo implants for higher output impedance. Combining these two approaches, we experimentally demonstrate a high gain of over 60-dB with just 18-nW power consumption from 0.25-V power supply.
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2014.6865526