Low voltage PV power integration into medium voltage grid using high voltage SiC devices

High voltage high power semiconductor devices are being used for grid integration of renewable energy sources. 1200V, 100A SiC Mosfets, 10 kV SiC Mosfets and 10kV SiC JBS Diodes have proven to be beneficial for high voltage application. High Voltage SiC devices enable high switching frequency operat...

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Bibliographic Details
Main Authors: Chattopadhyay, Ritwik, Bhattacharya, Subhashish, Foureaux, Nicole C., Silva, Sidelmo M., Braz Cardoso, F., de Paula, Helder, Pires, Igor A., Cortizio, Porfirio C., Moraes, Lenin, de S Brito, Jose A.
Format: Conference Proceeding
Language:English
Subjects:
Arrays
Artificial intelligence
Inverters
Switches
Online Access:Request full text
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Summary:High voltage high power semiconductor devices are being used for grid integration of renewable energy sources. 1200V, 100A SiC Mosfets, 10 kV SiC Mosfets and 10kV SiC JBS Diodes have proven to be beneficial for high voltage application. High Voltage SiC devices enable high switching frequency operation thus reducing size of passive elements. Scope of this paper focuses on an alternative approach for 0.9 MW PV power plant, which is currently being constructed in Brazil. Use of high power SiC devices for PV power plant for integration into 13.8 kV grid provides higher efficiency, reduction in size and volume.
ISSN:2150-6078
DOI:10.1109/IPEC.2014.6870149