Observation of in situ B-doped Epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B 2 H 6 flow rate.

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Bibliographic Details
Main Authors: Byongju Kim, Hyunchul Jang, Dae-Seop Byeon, Sangmo Koo, Dae-Hong Ko
Format: Conference Proceeding
Language:English
Subjects:
Epitaxial growth
Scanning electron microscopy
Silicon
Substrates
Surface morphology
Surface treatment
Online Access:Request full text
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Description
Summary:In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B 2 H 6 flow rate.
DOI:10.1109/ISTDM.2014.6874662