Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy

For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb conte...

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Bibliographic Details
Main Authors: Qian Zhou, Chunlei Zhan, Xiao Gong, Taw Kuei Chan, Osipowicz, Thomas, Sin Leng Lim, Eng Soon Tok, Yee-Chia Yeo
Format: Conference Proceeding
Language:English
Subjects:
Decision support systems
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Summary:For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb content of ~0.3% was obtained.
DOI:10.1109/ISTDM.2014.6874665