Germanium for photonic applications

Localized GOI wires have been grown using a LPE process resulting in single crystal layers up to 400 urn in length and 5 urn in width. We have reported on the design, fabrication and characterisation of a 4-channel AMMI structure integrated with germanium p-i-n photodetectors to form a silicon photo...

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Bibliographic Details
Main Authors: Gardes, F. Y., Littlejohns, C. G., Soler Penades, J., Mitchell, C. J., Khokhar, A. Z., Reed, G. T., Mashanovich, G. Z.
Format: Conference Proceeding
Language:English
Subjects:
Decision support systems
Detectors
Germanium
Silicon
Wires
Online Access:Request full text
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Summary:Localized GOI wires have been grown using a LPE process resulting in single crystal layers up to 400 urn in length and 5 urn in width. We have reported on the design, fabrication and characterisation of a 4-channel AMMI structure integrated with germanium p-i-n photodetectors to form a silicon photonics receiver. Light detection at 50 Gb/s has been demonstrated with a low dark current of
DOI:10.1109/ISTDM.2014.6874667