Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

In this letter, one single-layer diamond-like carbon (DLC) resistive random access memory (RRAM) and two opposite stacking double-layer DLC/HfO 2 RRAMs were prepared to investigate the resistance switching mechanism of DLC-based memristors. The RRAM devices were fabricated by sandwiching the active-...

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Bibliographic Details
Published in:IEEE electron device letters 2014-10, Vol.35 (10), p.1016-1018
Main Authors: Chen, Yi-Jiun, Lou, Jen-Chung, Chen, Kai-Huang, Chen, Jung-Hui, Zheng, Jin-Cheng, Sze, Simon M., Chang, Kuan-Chang, Chang, Ting-Chang, Chen, Hsin-Lu, Young, Tai-Fa, Tsai, Tsung-Ming, Zhang, Rui, Chu, Tian-Jian, Ciou, Jian-Fa
Format: Article
Language:English
Subjects:
DLC
Educational institutions
Electrodes
Hafnium compounds
HfO
Hydrogen
oxygen
Resistance
RRAM
Switches
Tin
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Summary:In this letter, one single-layer diamond-like carbon (DLC) resistive random access memory (RRAM) and two opposite stacking double-layer DLC/HfO 2 RRAMs were prepared to investigate the resistance switching mechanism of DLC-based memristors. The RRAM devices were fabricated by sandwiching the active-layers between Pt top and TiN bottom electrodes. Based on the analyses for Pt/DLC/TiN and Pt/DLC/HfO 2 /TiN structures, we demonstrated the resistance switching in DLC RRAM is induced by hydrogen reaction near the Pt electrode. In addition, the resistance switching in Pt/HfO 2 /DLC/TiN structure is attributed to oxygen reaction near the TiN electrode. Based on the results of HfO 2 stacked with DLC devices, we demonstrated for the first time the resistance switching of DLC at inactive electrode side (Pt) and active electrode side (TiN) is attributed to hydrogen and oxygen-induced redox of C-C bonds, respectively.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2343331