Analog Circuit Design Using Tunnel-FETs

Tunnel-FET (TFET) is a major candidate for beyond-CMOS technologies. In this paper, the properties of the TFETs that affect analog circuit design are studied. To demonstrate how TFETs can enhance the performance or change the topology of the analog circuits, several building blocks such as operation...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2015-01, Vol.62 (1), p.39-48
Main Authors: Sedighi, Behnam, Hu, Xiaobo Sharon, Huichu Liu, Nahas, Joseph J., Niemier, Michael
Format: Article
Language:English
Subjects:
Amplifiers
Analog circuits
Asymmetry
benchmark testing
Capacitance
Circuits
CMOS integrated circuits
Current mirrors
Design engineering
Direct current
Integrated circuits
Logic gates
MOSFET
nanoscale devices
Power dissipation
sampled-data circuits
Semiconductors
Transconductance
tunneling devices
Voltage gain
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Summary:Tunnel-FET (TFET) is a major candidate for beyond-CMOS technologies. In this paper, the properties of the TFETs that affect analog circuit design are studied. To demonstrate how TFETs can enhance the performance or change the topology of the analog circuits, several building blocks such as operational transconductance amplifiers (OTAs), current mirrors, and track-and-hold circuits are examined. It is shown that TFETs are promising for low-power and low-voltage designs, wherein transistors are biased at low-to-moderate current densities. Comparing 14-nm III-V TFET-based OTAs with Si-MOSFET-based designs demonstrates up to 5 times reduction in the power dissipation of the amplifiers and more than an order of magnitude increase in their DC voltage gain. The challenges and opportunities that come with the special characteristics of TFETs, namely asymmetry, ambipolar behavior, negative differential resistance, and superlinear operation are discussed in detail.
ISSN:1549-8328
1558-0806
DOI:10.1109/TCSI.2014.2342371