A new method for electrical extraction of spacer width, poly sheet resistance, and poly CD in salicide process

A new method for extraction of polysilicon CD (critical dimension) and poly sheet resistance for narrow poly lines is developed. This new method is especially useful in salicide (self-aligned silicide) processes, where the standard method of electrical extraction of poly sheet resistance is from a V...

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Bibliographic Details
Main Authors: Rezvani, G.A., Bothra, S., Lin, X.-W., Ho, A.
Format: Conference Proceeding
Language:English
Subjects:
Electric resistance
Electric variables measurement
Electrical resistance measurement
Measurement standards
Microelectronics
Production
Space technology
Standards development
Testing
Very large scale integration
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Summary:A new method for extraction of polysilicon CD (critical dimension) and poly sheet resistance for narrow poly lines is developed. This new method is especially useful in salicide (self-aligned silicide) processes, where the standard method of electrical extraction of poly sheet resistance is from a Van Der Pauw structure; use of that method to extract the CD from a narrow poly line is no longer applicable due to the poly sheet resistance dependence on poly line width. In addition, the new method allows for electrical extraction of spacer width, which is not extractable with the standard method. This method is applied to salicided poly lines in a 0.25 /spl mu/m technology, and the results of measurements are discussed and compared with the standard method.
DOI:10.1109/ICMTS.1998.688034