Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform

We have investigated a fabrication procedure of a multi-bandgap III-V on insulator (III-V-OI) wafer by quantum well intermixing for active/passive integration on III-V CMOS photonics platform. We have sucessfully achieved approximately 50-nm wavelength shift in photoluminecense peak on the III-V-OI...

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Bibliographic Details
Main Authors: Kuramochi, Misa, Takenaka, Mitsuru, Ikku, Yuki, Takagi, Shinichi
Format: Conference Proceeding
Language:English
Subjects:
Arrayed waveguide gratings
CMOS integrated circuits
Fabrication
Implants
Indium phosphide
Insulators
Photonics
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Summary:We have investigated a fabrication procedure of a multi-bandgap III-V on insulator (III-V-OI) wafer by quantum well intermixing for active/passive integration on III-V CMOS photonics platform. We have sucessfully achieved approximately 50-nm wavelength shift in photoluminecense peak on the III-V-OI wafer by P impantation with 40 keV implant energy.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2014.6880518