Analysis of a new test pattern for measuring the carrier-carrier scattering mobilities versus injection level in silicon

A recently proposed technique for determining injection-dependent carrier mobilities is explored and enhanced. Better control of the injection level is obtained by adding a new feature to the basic test pattern for direct estimation of the carrier density operated by the measure. In particular, nume...

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Bibliographic Details
Main Authors: Bellone, S., Persiano, G.V., Parrella, C.
Format: Conference Proceeding
Language:English
Subjects:
Artificial intelligence
Charge carrier density
Charge carrier processes
Density measurement
Electron mobility
P-i-n diodes
Pattern analysis
Scattering
Testing
Voltage
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Description
Summary:A recently proposed technique for determining injection-dependent carrier mobilities is explored and enhanced. Better control of the injection level is obtained by adding a new feature to the basic test pattern for direct estimation of the carrier density operated by the measure. In particular, numerical simulation of the measurement approach allows us to quantify the effect of the parasitic capacitance and the test pattern geometry on the mobility measurement.
DOI:10.1109/ICMTS.1998.688063