Epitaxial CaF2/BaF2-on-Si layers and electronic properties of the interface with the substrate

Layers of CaF 2 and BaF 2 were grown on Si substrates using molecular beam epitaxy. X-ray photoelectron spectroscopy has shown that the interface in Si-BaF 2 structure at 750°C is mainly formed with Si-Ba bonds. Metal-insulator structures have been formed, and capacitance-voltage characteristics (C-...

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Bibliographic Details
Main Authors: Fedosenko, Evgeniy V., Akimov, Aleksey N., Klimov, Alexander E., Shumsky, Vladimir N., Erkov, Vladimir G., Suprun, Sergey P.
Format: Conference Proceeding
Language:English
Subjects:
Dielectric materials
Epitaxial growth
Frequency measurement
Interfaces
Molecular Beam Epitaxy
Recrystallization
Semiconducting materials
Silicon
Substrates
Surface processes
Temperature
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Summary:Layers of CaF 2 and BaF 2 were grown on Si substrates using molecular beam epitaxy. X-ray photoelectron spectroscopy has shown that the interface in Si-BaF 2 structure at 750°C is mainly formed with Si-Ba bonds. Metal-insulator structures have been formed, and capacitance-voltage characteristics (C-V and G-V characteristics) were measured at various test voltage frequencies. Despite of the high density of broken bonds at the interface (about 10 14 cm -2 ), the density of electronic states calculated from C-V and G-V characteristics was about 10 11 eV -1 cm -2 .
ISSN:1815-3712
DOI:10.1109/EDM.2014.6882484