Excellent process control technology for highly manufacturable and high performance 0.18 /spl mu/m CMOS LSIs

Highly manufacturable and high performance 0.18 μm CMOS technology for logic LSIs with excellent process controllability has been proposed. N/sub 2/O based oxynitride process and OPC (Optical Proximity Correction) technology was developed and realized superior uniformity in CMOSFET characteristics....

Full description

Saved in:
Bibliographic Details
Main Authors: Nakayama, T., Asamura, T., Kako, M., Murota, M., Matsumoto, M., Washizu, Y., Tomose, K., Kasai, K., Okayama, Y., Hashimoto, K., Ohuchi, K., Hattori, K., Shiozawa, J., Harakawa, H., Matsuoka, F., Kinugawa, M.
Format: Conference Proceeding
Language:English
Subjects:
CMOS logic circuits
CMOS process
CMOS technology
Controllability
Large scale integration
Manufacturing processes
Microprocessors
MOSFET circuits
Nitrogen
Process control
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Highly manufacturable and high performance 0.18 μm CMOS technology for logic LSIs with excellent process controllability has been proposed. N/sub 2/O based oxynitride process and OPC (Optical Proximity Correction) technology was developed and realized superior uniformity in CMOSFET characteristics. A new Ti salicide technology which was fine line effect free down to 0.15 μm was also established. These technologies were demonstrated and verified by application to 0.18 μm high performance logic LSI with high performance interconnects technology.
DOI:10.1109/VLSIT.1998.689234