Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s

This paper reports on gate-last (GL) In 0.7 Ga 0.3 As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μ n,eff >5,500 cm 2 /V-s at 300k). Short-channel device with L g = 40 nm also exhibit excellent e...

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Bibliographic Details
Main Authors: Shin, C-S, Park, W-K, Shin, S. H., Cho, Y. D., Ko, D. H., Kim, T-W, Koh, D. H., Kwon, H. M., Hill, R. J. W., Kirsch, P., Maszara, W., Kim, D-H
Format: Conference Proceeding
Language:English
Subjects:
Aluminum oxide
Hafnium compounds
Indium gallium arsenide
Logic gates
MOCVD
MOSFET
Surface treatment
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Summary:This paper reports on gate-last (GL) In 0.7 Ga 0.3 As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μ n,eff >5,500 cm 2 /V-s at 300k). Short-channel device with L g = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with g m_max = 2 mS/μm at V DS = 0.5 V. This record performance is achieved by using a low D it and Al 2 O 3 /HfO 2 gate stack with EOT ~ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.
ISSN:0743-1562
DOI:10.1109/VLSIT.2014.6894351