Loading…
Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s
This paper reports on gate-last (GL) In 0.7 Ga 0.3 As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μ n,eff >5,500 cm 2 /V-s at 300k). Short-channel device with L g = 40 nm also exhibit excellent e...
Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Conference Proceeding |
| Language: | English |
| Subjects: | |
| Online Access: | Request full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | |
|---|---|
| cites | |
| container_end_page | 2 |
| container_issue | |
| container_start_page | 1 |
| container_title | |
| container_volume | |
| creator | Shin, C-S Park, W-K Shin, S. H. Cho, Y. D. Ko, D. H. Kim, T-W Koh, D. H. Kwon, H. M. Hill, R. J. W. Kirsch, P. Maszara, W. Kim, D-H |
| description | This paper reports on gate-last (GL) In 0.7 Ga 0.3 As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μ n,eff >5,500 cm 2 /V-s at 300k). Short-channel device with L g = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with g m_max = 2 mS/μm at V DS = 0.5 V. This record performance is achieved by using a low D it and Al 2 O 3 /HfO 2 gate stack with EOT ~ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process. |
| doi_str_mv | 10.1109/VLSIT.2014.6894351 |
| format | conference_proceeding |
| fullrecord | <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_6894351</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6894351</ieee_id><sourcerecordid>6894351</sourcerecordid><originalsourceid>FETCH-ieee_primary_68943513</originalsourceid><addsrcrecordid>eNpjYJAyNNAzNDSw1A_zCfYM0TMyMDTRM7OwNDE2NWRk4DI0Mbe0NDY2NjJlRnAMzVkYOA3MTYx1DU3NjDgYuIqLswwMjAxMjS04GUKDS5N0DQ0MFPJyFYpS04vyy_MUgvVdFNwTS1J1fRKLSxQ88wz0zN0TDfSMHYsVAsMVfP2D3VxDihXKM0syFM7tydNJTUtTsFMw1TEFmpKca6QfplvMw8CalphTnMoLpbkZpIF6nD10M1NTU-MLijJzE4sq46HuNsYvCwAa4j6M</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s</title><source>IEEE Xplore All Conference Series</source><creator>Shin, C-S ; Park, W-K ; Shin, S. H. ; Cho, Y. D. ; Ko, D. H. ; Kim, T-W ; Koh, D. H. ; Kwon, H. M. ; Hill, R. J. W. ; Kirsch, P. ; Maszara, W. ; Kim, D-H</creator><creatorcontrib>Shin, C-S ; Park, W-K ; Shin, S. H. ; Cho, Y. D. ; Ko, D. H. ; Kim, T-W ; Koh, D. H. ; Kwon, H. M. ; Hill, R. J. W. ; Kirsch, P. ; Maszara, W. ; Kim, D-H</creatorcontrib><description>This paper reports on gate-last (GL) In 0.7 Ga 0.3 As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μ n,eff >5,500 cm 2 /V-s at 300k). Short-channel device with L g = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with g m_max = 2 mS/μm at V DS = 0.5 V. This record performance is achieved by using a low D it and Al 2 O 3 /HfO 2 gate stack with EOT ~ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.</description><identifier>ISSN: 0743-1562</identifier><identifier>ISBN: 1479933317</identifier><identifier>ISBN: 9781479933310</identifier><identifier>EISBN: 1479933325</identifier><identifier>EISBN: 1479933309</identifier><identifier>EISBN: 9781479933303</identifier><identifier>EISBN: 9781479933327</identifier><identifier>DOI: 10.1109/VLSIT.2014.6894351</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum oxide ; Hafnium compounds ; Indium gallium arsenide ; Logic gates ; MOCVD ; MOSFET ; Surface treatment</subject><ispartof>2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6894351$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,23930,23931,25140,27925,54555,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6894351$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Shin, C-S</creatorcontrib><creatorcontrib>Park, W-K</creatorcontrib><creatorcontrib>Shin, S. H.</creatorcontrib><creatorcontrib>Cho, Y. D.</creatorcontrib><creatorcontrib>Ko, D. H.</creatorcontrib><creatorcontrib>Kim, T-W</creatorcontrib><creatorcontrib>Koh, D. H.</creatorcontrib><creatorcontrib>Kwon, H. M.</creatorcontrib><creatorcontrib>Hill, R. J. W.</creatorcontrib><creatorcontrib>Kirsch, P.</creatorcontrib><creatorcontrib>Maszara, W.</creatorcontrib><creatorcontrib>Kim, D-H</creatorcontrib><title>Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s</title><title>2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers</title><addtitle>VLSIT</addtitle><description>This paper reports on gate-last (GL) In 0.7 Ga 0.3 As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μ n,eff >5,500 cm 2 /V-s at 300k). Short-channel device with L g = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with g m_max = 2 mS/μm at V DS = 0.5 V. This record performance is achieved by using a low D it and Al 2 O 3 /HfO 2 gate stack with EOT ~ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.</description><subject>Aluminum oxide</subject><subject>Hafnium compounds</subject><subject>Indium gallium arsenide</subject><subject>Logic gates</subject><subject>MOCVD</subject><subject>MOSFET</subject><subject>Surface treatment</subject><issn>0743-1562</issn><isbn>1479933317</isbn><isbn>9781479933310</isbn><isbn>1479933325</isbn><isbn>1479933309</isbn><isbn>9781479933303</isbn><isbn>9781479933327</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2014</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpjYJAyNNAzNDSw1A_zCfYM0TMyMDTRM7OwNDE2NWRk4DI0Mbe0NDY2NjJlRnAMzVkYOA3MTYx1DU3NjDgYuIqLswwMjAxMjS04GUKDS5N0DQ0MFPJyFYpS04vyy_MUgvVdFNwTS1J1fRKLSxQ88wz0zN0TDfSMHYsVAsMVfP2D3VxDihXKM0syFM7tydNJTUtTsFMw1TEFmpKca6QfplvMw8CalphTnMoLpbkZpIF6nD10M1NTU-MLijJzE4sq46HuNsYvCwAa4j6M</recordid><startdate>201406</startdate><enddate>201406</enddate><creator>Shin, C-S</creator><creator>Park, W-K</creator><creator>Shin, S. H.</creator><creator>Cho, Y. D.</creator><creator>Ko, D. H.</creator><creator>Kim, T-W</creator><creator>Koh, D. H.</creator><creator>Kwon, H. M.</creator><creator>Hill, R. J. W.</creator><creator>Kirsch, P.</creator><creator>Maszara, W.</creator><creator>Kim, D-H</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201406</creationdate><title>Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s</title><author>Shin, C-S ; Park, W-K ; Shin, S. H. ; Cho, Y. D. ; Ko, D. H. ; Kim, T-W ; Koh, D. H. ; Kwon, H. M. ; Hill, R. J. W. ; Kirsch, P. ; Maszara, W. ; Kim, D-H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_68943513</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Aluminum oxide</topic><topic>Hafnium compounds</topic><topic>Indium gallium arsenide</topic><topic>Logic gates</topic><topic>MOCVD</topic><topic>MOSFET</topic><topic>Surface treatment</topic><toplevel>online_resources</toplevel><creatorcontrib>Shin, C-S</creatorcontrib><creatorcontrib>Park, W-K</creatorcontrib><creatorcontrib>Shin, S. H.</creatorcontrib><creatorcontrib>Cho, Y. D.</creatorcontrib><creatorcontrib>Ko, D. H.</creatorcontrib><creatorcontrib>Kim, T-W</creatorcontrib><creatorcontrib>Koh, D. H.</creatorcontrib><creatorcontrib>Kwon, H. M.</creatorcontrib><creatorcontrib>Hill, R. J. W.</creatorcontrib><creatorcontrib>Kirsch, P.</creatorcontrib><creatorcontrib>Maszara, W.</creatorcontrib><creatorcontrib>Kim, D-H</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shin, C-S</au><au>Park, W-K</au><au>Shin, S. H.</au><au>Cho, Y. D.</au><au>Ko, D. H.</au><au>Kim, T-W</au><au>Koh, D. H.</au><au>Kwon, H. M.</au><au>Hill, R. J. W.</au><au>Kirsch, P.</au><au>Maszara, W.</au><au>Kim, D-H</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s</atitle><btitle>2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers</btitle><stitle>VLSIT</stitle><date>2014-06</date><risdate>2014</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><issn>0743-1562</issn><isbn>1479933317</isbn><isbn>9781479933310</isbn><eisbn>1479933325</eisbn><eisbn>1479933309</eisbn><eisbn>9781479933303</eisbn><eisbn>9781479933327</eisbn><abstract>This paper reports on gate-last (GL) In 0.7 Ga 0.3 As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μ n,eff >5,500 cm 2 /V-s at 300k). Short-channel device with L g = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with g m_max = 2 mS/μm at V DS = 0.5 V. This record performance is achieved by using a low D it and Al 2 O 3 /HfO 2 gate stack with EOT ~ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.</abstract><pub>IEEE</pub><doi>10.1109/VLSIT.2014.6894351</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0743-1562 |
| ispartof | 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2 |
| issn | 0743-1562 |
| language | eng |
| recordid | cdi_ieee_primary_6894351 |
| source | IEEE Xplore All Conference Series |
| subjects | Aluminum oxide Hafnium compounds Indium gallium arsenide Logic gates MOCVD MOSFET Surface treatment |
| title | Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T08%3A11%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Sub-100%20nm%20regrown%20S/D%20Gate-Last%20In0.7Ga0.3As%20QW%20MOSFETs%20with%20%CE%BCn,eff%20%3E%205,500%20cm2/V-s&rft.btitle=2014%20Symposium%20on%20VLSI%20Technology%20(VLSI-Technology):%20Digest%20of%20Technical%20Papers&rft.au=Shin,%20C-S&rft.date=2014-06&rft.spage=1&rft.epage=2&rft.pages=1-2&rft.issn=0743-1562&rft.isbn=1479933317&rft.isbn_list=9781479933310&rft_id=info:doi/10.1109/VLSIT.2014.6894351&rft.eisbn=1479933325&rft.eisbn_list=1479933309&rft.eisbn_list=9781479933303&rft.eisbn_list=9781479933327&rft_dat=%3Cieee_CHZPO%3E6894351%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-ieee_primary_68943513%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6894351&rfr_iscdi=true |