Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond

A scalable multi-V T enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-V T is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work fun...

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Bibliographic Details
Main Authors: Ragnarsson, Lars-Ake, Chew, S. A., Dekkers, H., Luque, M. Toledano, Parvais, B., De Keersgieter, A., Devriendt, K., Van Ammel, A., Schram, T., Yoshida, N., Phatak, A., Han, K., Colombeau, B., Brand, A., Horiguchi, N., Thean, A. V.-Y
Format: Conference Proceeding
Language:English
Subjects:
Doping
FinFETs
Implants
Logic gates
Nitrogen
Tin
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Summary:A scalable multi-V T enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-V T is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ~400 mV is realized by adjusting the TiN bottom barrier thickness underneath TiAl, while over 200 mV shifts are achieved by means of implantation of nitrogen into ALD TiN/TiAl/TiN. The gate-stack T inv , J G , D IT and reliability as well as the device performance are shown to be unaffected by the multi V T process.
ISSN:0743-1562
DOI:10.1109/VLSIT.2014.6894359