Time-dependent variation: A new defect-based prediction methodology

For the first time, different impacts of as-grown and generated defects on nm-sized devices are demonstrated. As-grown hole traps are responsible for WDF, which increases with Vg_op and tw. The generated defects are substantial, but do not contribute to WDF and consequently are not detected by RTN....

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Bibliographic Details
Main Authors: Duan, M., Zhang, J. F., Ji, Z., Zhang, W., Kaczer, B., Schram, T., Ritzenthaler, R., Thean, A., Groeseneken, G., Asenov, A.
Format: Conference Proceeding
Language:English
Subjects:
Discharges (electric)
Educational institutions
Predictive models
Random access memory
Stress
Temperature measurement
Very large scale integration
Online Access:Request full text
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Summary:For the first time, different impacts of as-grown and generated defects on nm-sized devices are demonstrated. As-grown hole traps are responsible for WDF, which increases with Vg_op and tw. The generated defects are substantial, but do not contribute to WDF and consequently are not detected by RTN. The non-discharging component follows the same model as that for large devices: the `AG' model. Based on this defect framework, a new methodology is proposed for test engineers to predict the long term TDV and yield and its prediction-capability is verified.
ISSN:0743-1562
DOI:10.1109/VLSIT.2014.6894373