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Time-dependent variation: A new defect-based prediction methodology
For the first time, different impacts of as-grown and generated defects on nm-sized devices are demonstrated. As-grown hole traps are responsible for WDF, which increases with Vg_op and tw. The generated defects are substantial, but do not contribute to WDF and consequently are not detected by RTN....
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| Format: | Conference Proceeding |
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| creator | Duan, M. Zhang, J. F. Ji, Z. Zhang, W. Kaczer, B. Schram, T. Ritzenthaler, R. Thean, A. Groeseneken, G. Asenov, A. |
| description | For the first time, different impacts of as-grown and generated defects on nm-sized devices are demonstrated. As-grown hole traps are responsible for WDF, which increases with Vg_op and tw. The generated defects are substantial, but do not contribute to WDF and consequently are not detected by RTN. The non-discharging component follows the same model as that for large devices: the `AG' model. Based on this defect framework, a new methodology is proposed for test engineers to predict the long term TDV and yield and its prediction-capability is verified. |
| doi_str_mv | 10.1109/VLSIT.2014.6894373 |
| format | conference_proceeding |
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F.</creatorcontrib><creatorcontrib>Ji, Z.</creatorcontrib><creatorcontrib>Zhang, W.</creatorcontrib><creatorcontrib>Kaczer, B.</creatorcontrib><creatorcontrib>Schram, T.</creatorcontrib><creatorcontrib>Ritzenthaler, R.</creatorcontrib><creatorcontrib>Thean, A.</creatorcontrib><creatorcontrib>Groeseneken, G.</creatorcontrib><creatorcontrib>Asenov, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Duan, M.</au><au>Zhang, J. F.</au><au>Ji, Z.</au><au>Zhang, W.</au><au>Kaczer, B.</au><au>Schram, T.</au><au>Ritzenthaler, R.</au><au>Thean, A.</au><au>Groeseneken, G.</au><au>Asenov, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Time-dependent variation: A new defect-based prediction methodology</atitle><btitle>2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers</btitle><stitle>VLSIT</stitle><date>2014-09-08</date><risdate>2014</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><issn>0743-1562</issn><isbn>9781479933310</isbn><isbn>1479933317</isbn><eisbn>1479933325</eisbn><eisbn>1479933309</eisbn><eisbn>9781479933303</eisbn><eisbn>9781479933327</eisbn><abstract>For the first time, different impacts of as-grown and generated defects on nm-sized devices are demonstrated. As-grown hole traps are responsible for WDF, which increases with Vg_op and tw. The generated defects are substantial, but do not contribute to WDF and consequently are not detected by RTN. The non-discharging component follows the same model as that for large devices: the `AG' model. Based on this defect framework, a new methodology is proposed for test engineers to predict the long term TDV and yield and its prediction-capability is verified.</abstract><pub>IEEE</pub><doi>10.1109/VLSIT.2014.6894373</doi><tpages>2</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0743-1562 |
| ispartof | 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2 |
| issn | 0743-1562 |
| language | eng |
| recordid | cdi_ieee_primary_6894373 |
| source | IEEE Xplore All Conference Series |
| subjects | Discharges (electric) Educational institutions Predictive models Random access memory Stress Temperature measurement Very large scale integration |
| title | Time-dependent variation: A new defect-based prediction methodology |
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