Integration of silicon photonics in bulk CMOS

The first monolithic process flow integrating silicon photonics on operational bulk CMOS has been developed. Features include deep-trench isolation, polysilicon waveguides, grating couplers, filters, modulators, and detectors. Fully functional on-chip CMOS enables Tx/Rx operation while minimizing in...

Full description

Saved in:
Bibliographic Details
Main Authors: Meade, Roy, Orcutt, Jason S., Mehta, Karan, Tehar-Zahav, Ofer, Miller, Daniel, Georgas, Michael, Moss, Ben, Chen Sun, Yu-Hsin Chen, Shainline, Jeffrey, Wade, Mark, Bafrali, Reha, Sternberg, Zvi, Machavariani, Galina, Sandhu, Gurtej, Popovic, Milos, Ram, Rajeev, Stojanovic, Vladimir
Format: Conference Proceeding
Language:English
Subjects:
Attenuation
CMOS
CMOS integrated circuits
Couplers
Gratings
optical interconnect
Optical waveguides
Silicon germanium
Silicon photonics
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The first monolithic process flow integrating silicon photonics on operational bulk CMOS has been developed. Features include deep-trench isolation, polysilicon waveguides, grating couplers, filters, modulators, and detectors. Fully functional on-chip CMOS enables Tx/Rx operation while minimizing interconnect parasitics. With the addition of an external 1280nm source, a fully functional optical link (5Gb/s 2.8pJ/b), capable of wavelength division multiplexing, has been demonstrated. In addition to the polysilicon resonant detector used in the link, a monolithically-integrated Silicon-Germanium selective epitaxial growth based photodetector was developed.
ISSN:0743-1562
DOI:10.1109/VLSIT.2014.6894427