1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films

A 1T-1R pillar-type "topological-switching RAM" (TRAM) and the data retention of GeTe/Sb 2 Te 3 super-lattice were investigated. Reset voltage of TRAM, 2 V, was 40 % of that of the conventional PCM with Ge 2 Sb 2 Te 5 . From data retention evaluation, the TRAM was found to endure the reten...

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Bibliographic Details
Main Authors: Tai, M., Ohyanagi, T., Kinoshita, M., Morikawa, T., Akita, K., Kato, S., Shirakawa, H., Araidai, M., Shiraishi, K., Takaura, N.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Cleaning
Phase change materials
Random access memory
Resistance
Resistors
Temperature measurement
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Summary:A 1T-1R pillar-type "topological-switching RAM" (TRAM) and the data retention of GeTe/Sb 2 Te 3 super-lattice were investigated. Reset voltage of TRAM, 2 V, was 40 % of that of the conventional PCM with Ge 2 Sb 2 Te 5 . From data retention evaluation, the TRAM was found to endure the retention at 260 °C for 18 hours.
ISSN:0743-1562
DOI:10.1109/VLSIT.2014.6894436