Sputtered Deposited Carbon-Indium-Zinc Oxide Channel Layers for Use in Thin-Film Transistors

We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al 2 O 3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited...

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Bibliographic Details
Published in:IEEE electron device letters 2014-10, Vol.35 (10), p.1028-1030
Main Authors: Parthiban, Shanmugam, Soo-Hyun Kim, Jang-Yeon Kwon
Format: Article
Language:English
Subjects:
Annealing
Bonding
dielectric
Logic gates
metal oxide
sputtering
Stress
Thermal stability
Thin film transistors
Thin-film transistor (TFT)
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Summary:We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al 2 O 3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm 2 /V · s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 10 7 . Moreover, the a-CIZO TFTs showed with a good bias stability.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2345740