Ballistic Band-to-Band Tunneling in the OFF State in InGaAs MOSFETs

We present quantum transport simulation results for InAs and In 0.7 Ga 0.3 As double-gate MOSFETs by using an atomistic full-band basis to evaluate the tunneling currents in the OFF state. While InAs has the advantage of lower mass and higher injection velocity, it also has lower bandgap. For low ga...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2014-10, Vol.61 (10), p.3417-3422
Main Authors: Basu, Dipanjan, Kotlyar, Roza, Weber, Cory E., Stettler, Mark A.
Format: Article
Language:English
Subjects:
Channels
Clamps
Confinement
Doping
Drains
Indium arsenides
Indium gallium arsenide
Logic gates
MOSFET
MOSFETs
Photonic band gap
Simulation
Tunneling
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Summary:We present quantum transport simulation results for InAs and In 0.7 Ga 0.3 As double-gate MOSFETs by using an atomistic full-band basis to evaluate the tunneling currents in the OFF state. While InAs has the advantage of lower mass and higher injection velocity, it also has lower bandgap. For low gate bias, the overlap in energy of the valence band in the channel with the source/drain conduction bands results in band-to-band tunneling (BTBT) between source and drain, which clamps the OFF current. Such current can be reduced by increasing the bandgap of the material either by increasing confinement or by lowering the In content, for example, using In 0.7 Ga 0.3 As. Grading the doping of the source/drain region to create a wider barrier also reduces BTBT, but to a lesser extent.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2350912