Empirical Model for the Effective Electron Mobility in Silicon Nanowires

An empirical model for the effective electron mobility in silicon nanowires (SiNWs) is presented. The model is based on published mobility data from numerical simulations of electron transport in SiNWs with different cross sections. Both phonon scattering and surface roughness scattering as well as...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2014-11, Vol.61 (11), p.3601-3607
Main Authors: Granzner, Ralf, Polyakov, Vladimir M., Schippel, Christian, Schwierz, Frank
Format: Article
Language:English
Subjects:
Cross sections
Devices
Effective field
Electron mobility
Empirical analysis
empirical model
Mathematical model
Mathematical models
mobility
MOSFET
Nanowires
phonon scattering
Phonons
Scattering
Semiconductor device modeling
Silicon
silicon nanowires (SiNWs)
surface roughness (SR)
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Description
Summary:An empirical model for the effective electron mobility in silicon nanowires (SiNWs) is presented. The model is based on published mobility data from numerical simulations of electron transport in SiNWs with different cross sections. Both phonon scattering and surface roughness scattering as well as the impact of the effective vertical field are considered. A comparison with a variety of experimental mobility data from the literature shows that the model can be treated as a reference for benchmarking different NW technologies. The effective field dependence is modeled by a simple expression making our mobility model very efficient for the use in numerical device simulators or in analytical MOSFET models.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2354254