Heterojunction rear passivated contact for high efficiency n-Cz Si solar cells

We investigate the challenges and potential for high-efficiency n-type Cz Si solar cells having a hybrid structure - a diffused B emitter on the front side, and an amorphous Si heterojunction (SHJ) passivated full-area contact on the rear. This cell design has benefits over comparable high-efficienc...

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Bibliographic Details
Main Authors: Lee, Benjamin G., Nemeth, William, Hao-Chih Yuan, Page, Matthew R., LaSalvia, Vincenzo, Young, David L., Stradins, Paul
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Current density
Fabrication
Heterojunctions
Passivation
Photovoltaic cells
Silicon
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Summary:We investigate the challenges and potential for high-efficiency n-type Cz Si solar cells having a hybrid structure - a diffused B emitter on the front side, and an amorphous Si heterojunction (SHJ) passivated full-area contact on the rear. This cell design has benefits over comparable high-efficiency geometries such as PERL (passivated emitter rear locally diffused) and SHJ cells with heterojunctions both front and rear. We show that an advantage of the HJ rear contact is excellent passivation of the backside, with measured contact recombination current density J 0,b,c 700 mV. As an initial demonstration of the concept, we fabricate a hybrid-structure cell having V oc = 671 mV, J sc = 36.7 mA/cm 2 , FF = 0.75 and efficiency of 18.5%.
ISSN:0160-8371
DOI:10.1109/PVSC.2014.6924996