Carrier-selective, passivated contacts for high efficiency silicon solar cells based on transparent conducting oxides

We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO 2 and indium tin oxide. High-temperature silicon dioxide is grown on both surfaces on an n-type Si wafer to a thickness

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Bibliographic Details
Main Authors: Young, David L., Nemeth, William, Grover, Sachit, Norman, Andrew, Lee, Benjamin G., Stradins, Paul
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Indium tin oxide
ITO
passivated contacts
Passivation
Photovoltaic cells
Silicon
SiO 2
solar cells
Tunneling
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Description
Summary:We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO 2 and indium tin oxide. High-temperature silicon dioxide is grown on both surfaces on an n-type Si wafer to a thickness
ISSN:0160-8371
DOI:10.1109/PVSC.2014.6925147