SOI-Based Schottky Barrier Diode Array for Ultraviolet Line-Scanner

This paper reports on fabrication and characterization of Schottky barrier diodes, which were obtained by Schottky contacts between aluminum electrodes and phosphorous-doped single crystalline silicon layer of silicon-on-insulator (SOI) structure. Our photodetectors (PDs) with this structure have ad...

Full description

Saved in:
Bibliographic Details
Published in:IEEE sensors journal 2015-03, Vol.15 (3), p.1727-1731
Main Authors: You-Na Lee, Jang-Kyoo Shin, Young-Tae Lee, Ishida, Makoto, Wanghoon Lee
Format: Article
Language:English
Subjects:
Arrays
Detectors
Electrodes
Fabrication
Photodetectors
Schottky contacts
Schottky diodes
Silicon
silicon on insulator technology
UV line scanner
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper reports on fabrication and characterization of Schottky barrier diodes, which were obtained by Schottky contacts between aluminum electrodes and phosphorous-doped single crystalline silicon layer of silicon-on-insulator (SOI) structure. Our photodetectors (PDs) with this structure have advantages, which are simple fabrication process and compatible with complementary metal-oxide-semiconductor devices. The detector performed with the highest external quantum efficiency of 0.397 at 360 nm in ultraviolet spectral range and compared with other devices in previously reported papers. The light sensitivity of 116.2 mV/mW· cm 2 and stable response time of ~1.3 ms were achieved at 3 V applied voltage. In addition, operation of an SoI-based 1 × 6 PD array was demonstrated to verify the availability of ultraviolet line-scanner.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2014.2363872