Low Phase Noise Oscillator at 60 GHz Stabilized by a Substrate Integrated Cavity Resonator in LTCC

In this letter, we report a low phase noise oscillator exhibiting state-of-the-art phase noise characteristics at 60 GHz. The oscillator is stabilized by an off-chip substrate integrated waveguide (SIW) cavity resonator, manufactured in LTCC technology. The area on top of the cavity resonator is use...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2014-12, Vol.24 (12), p.887-889
Main Authors: Dancila, Dragos, Rottenberg, Xavier, Tilmans, Harrie A. C., De Raedt, Walter, Huynen, Isabelle
Format: Article
Language:English
Subjects:
BiCMOS
BiCMOS integrated circuits
Cavity resonators
LTCC
Microwaves
MMICs
Noise
Oscillations
oscillator
Oscillators
Phase noise
Resonant frequency
Silicon germanides
Simulation
State of the art
Substrates
V-band
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Summary:In this letter, we report a low phase noise oscillator exhibiting state-of-the-art phase noise characteristics at 60 GHz. The oscillator is stabilized by an off-chip substrate integrated waveguide (SIW) cavity resonator, manufactured in LTCC technology. The area on top of the cavity resonator is used to flip-chip mount the MMIC, realized in SiGe technology. Measured oscillators discussed in this paper operate at frequencies of 59.91, 59.97, and 59.98 GHz. The measured phase noise at 1 MHz offset is -115.76 dBc/Hz, -115.92 dBc/Hz and -116.41 dBc/Hz, respectively. To our knowledge, the present hybrid oscillator has the lowest phase noise and highest figure of merit of integrated oscillators at V-band. The simulations are in very good agreement with the measured oscillation frequencies.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2014.2361645