Device and process modeling: 20 Years at Intel's other fab

Embedding TCAD engineers in technology working groups has been an integral part of Intel's process development strategy since the company's inception. While this strategy remains the same, the challenges faced and the tools used by TCAD has undergone dramatic change over the last 20 years....

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Bibliographic Details
Main Author: Stettler, Mark A.
Format: Conference Proceeding
Language:English
Subjects:
Computational modeling
device modeling
Logic gates
MOS devices
process modeling
semiconductor simulation
Silicon
Stress
TCAD
Tunneling
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Description
Summary:Embedding TCAD engineers in technology working groups has been an integral part of Intel's process development strategy since the company's inception. While this strategy remains the same, the challenges faced and the tools used by TCAD has undergone dramatic change over the last 20 years. This talk will discuss three recent trends in process and device TCAD: the rise in the use of "atomistic" scale simulations, the focus on modeling defects, and the continuing need to bridge new, more physically rigorous approaches to older, more computationally efficient methods. These trends will be illustrated with recent TCAD studies conducted at Intel.
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2014.6931551