Microdose induced drain leakage effects in power trench MOSFETs: Experiment and modeling

We study experimentally and theoretically the microdose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We have found experimentally that cumulative increase of leakage drain current occurs by means of stochastic steps corresponding to str...

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Bibliographic Details
Main Authors: Zebrev, Gennady I., Vatuev, Alexander S., Useinov, Rustem G., Emeliyanov, Vladimir V., Anashin, Vasily S., Gorbunov, Maxim S., Turin, Valentin O.
Format: Conference Proceeding
Language:English
Subjects:
heavy ions
Ions
Leakage currents
LET
Logic gates
Microdose effects
Monte Carlo
MOSFET
parametric failures
parasitic transistor
Radiation effects
Semiconductor device modeling
singleevent effects
source-drain leakage
total dose effects
trench power MOSFETs
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Summary:We study experimentally and theoretically the microdose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We have found experimentally that cumulative increase of leakage drain current occurs by means of stochastic steps corresponding to strike of a single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs has been proposed.
DOI:10.1109/RADECS.2013.6937359