Verification of SRAM MСUs calculation technique for experiment time optimization

Single Event Upsets are a growing problem in memories. Therefore, it is important to properly characterize them in order to have a clear idea of how they behave in different applications and environments. Experiments using radiation are a usual method to achieve this goal. However, events produced i...

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Bibliographic Details
Main Authors: Boruzdina, Anna B., Ulanova, Anastasia V., Petrov, Andrey G., Telets, Vitaly A., Reviriego, Pedro, Maestro, Juan Antonio
Format: Conference Proceeding
Language:English
Subjects:
Electronic mail
Error correction codes
Memory management
multiple cell upsets (MCUs)
radiation
Random access memory
Region 8
single charged particles
Single event upsets
static random access memory (SRAM)
Testing
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Summary:Single Event Upsets are a growing problem in memories. Therefore, it is important to properly characterize them in order to have a clear idea of how they behave in different applications and environments. Experiments using radiation are a usual method to achieve this goal. However, events produced in memories in this way tend to accumulate over time, being difficult to determine the true number of events that have affected the system. In this paper, several experiments have been conducted to validate a technique that allows calculating the number of real events that have been produced after a radiation test.
DOI:10.1109/RADECS.2013.6937393