Verification of SRAM MСUs calculation technique for experiment time optimization

Single Event Upsets are a growing problem in memories. Therefore, it is important to properly characterize them in order to have a clear idea of how they behave in different applications and environments. Experiments using radiation are a usual method to achieve this goal. However, events produced i...

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Main Authors: Boruzdina, Anna B., Ulanova, Anastasia V., Petrov, Andrey G., Telets, Vitaly A., Reviriego, Pedro, Maestro, Juan Antonio
Format: Conference Proceeding
Language:English
Subjects:
Electronic mail
Error correction codes
Memory management
multiple cell upsets (MCUs)
radiation
Random access memory
Region 8
single charged particles
Single event upsets
static random access memory (SRAM)
Testing
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creator Boruzdina, Anna B.
Ulanova, Anastasia V.
Petrov, Andrey G.
Telets, Vitaly A.
Reviriego, Pedro
Maestro, Juan Antonio
description Single Event Upsets are a growing problem in memories. Therefore, it is important to properly characterize them in order to have a clear idea of how they behave in different applications and environments. Experiments using radiation are a usual method to achieve this goal. However, events produced in memories in this way tend to accumulate over time, being difficult to determine the true number of events that have affected the system. In this paper, several experiments have been conducted to validate a technique that allows calculating the number of real events that have been produced after a radiation test.
doi_str_mv 10.1109/RADECS.2013.6937393
format conference_proceeding
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Electronic mail
Error correction codes
Memory management
multiple cell upsets (MCUs)
radiation
Random access memory
Region 8
single charged particles
Single event upsets
static random access memory (SRAM)
Testing
title Verification of SRAM MСUs calculation technique for experiment time optimization
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