Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT

Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can be occurring simultaneously. It is shown that biased negatively the gate leads to a substantial increase of SEB cross section.

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Bibliographic Details
Main Authors: Foro, L. L., Touboul, A. D., Wrobel, F., Rech, P., Dilillo, L., Frost, C., Saigne, F.
Format: Conference Proceeding
Language:English
Subjects:
atmospheric neutrons
cross section
Electric fields
gate damage
Insulated Gate Bipolar Transistor (IGBT)
Insulated gate bipolar transistors
Logic gates
MOSFET
Neutrons
SEB
SEGR
Semiconductor optical amplifiers
Sensitivity
Trench Gate Fieldstop
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Description
Summary:Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can be occurring simultaneously. It is shown that biased negatively the gate leads to a substantial increase of SEB cross section.
DOI:10.1109/RADECS.2013.6937428