GaN FET Nonlinear Modeling Based on Double Pulse / Characteristics

A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are dealt with in terms of a nonlinear state equation, whi...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2014-12, Vol.62 (12), p.3262-3273
Main Authors: Santarelli, Alberto, Niessen, Daniel, Cignani, Rafael, Gibiino, Gian Piero, Traverso, Pier Andrea, Florian, Corrado, Schreurs, Dominique M. M.-P, Filicori, Fabio
Format: Article
Language:English
Subjects:
Charge carrier processes
Current measurement
Field-effect transistors (FETs)
Gallium nitride
gallium nitride (GaN)
Mathematical model
Pulse measurements
semiconductor device modeling
Solid modeling
Voltage measurement
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Summary:A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are dealt with in terms of a nonlinear state equation, which describes the rate of change of the trap state as a function of its actual distance from the corresponding steady state. Model experimental validation is carried out, after on-wafer characterization of a 1-mm AlGaN-GaN on SiC FET, both under strong and mild nonlinear operation.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2014.2364236