Silicon LEDs in FinFET technology

We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped activ...

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Bibliographic Details
Main Authors: Piccolo, G., Kuindersma, P. I., Ragnarsson, L.-A, Hueting, R. J. E., Collaert, N., Schmitz, J.
Format: Conference Proceeding
Language:English
Subjects:
Carrier injectors
Electric potential
Electroluminescence
Elemental semiconductors
FinFETs
Infrared light sources
Integrated optics
Junctions
LED
Light emitting diodes
Logic gates
Nanometric devices
Near-infrared light emission
P-i-n diodes
Radiative recombination
Silicon
Silicon on insulator technology
Silicon Photonics
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Summary:We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2014.6948813