A MOS Parametric Integrator With Improved Linearity for SC \Sigma\Delta Modulators

This brief presents a double complimentary metal- oxide-semiconductor (MOS) parametric integrator (DCMPI) with improved linearity characteristics for wideband switched-capacitor sigma-delta (ΣΔ) modulators. Compared with the MOS parametric integrator [1], the proposed circuit achieves similar power,...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2015-03, Vol.62 (3), p.231-235
Main Authors: Hoda Seyedhosseinzadeh, B., Nabavi, A.
Format: Article
Language:English
Subjects:
Capacitors
Circuits
CMOS
Computer simulation
Integrators
Linearity
low distortion
Mathematical models
Metal oxide semiconductors
Modulation
Modulators
MOS parametric integrator
Noise
Semiconductor device modeling
switched-capacitor circuits
Transfer functions
Transistors
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Summary:This brief presents a double complimentary metal- oxide-semiconductor (MOS) parametric integrator (DCMPI) with improved linearity characteristics for wideband switched-capacitor sigma-delta (ΣΔ) modulators. Compared with the MOS parametric integrator [1], the proposed circuit achieves similar power, noise, and speed performance, while its linearity characteristics and transfer function are improved. The main nonideality improvements in the proposed DCMPI are presented through the mathematical formulas and verified through the postlayout simulations performed in the Spectre/Cadence electrical simulator using the BSIM3v3 complementary MOS (CMOS) model in the standard 0.18-μm CMOS process.
ISSN:1549-7747
1558-3791
DOI:10.1109/TCSII.2014.2368971