A voltage controlled current source gate drive method for IGBT devices

To reduce the power dissipation and switching stress of high power IGBTs during switching transient, a new active gate drive method based on voltage controlled current source (VCCS) is proposed in this paper. Compared to the conventional gate drive (CGD) for IGBTs, the proposed current source gate d...

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Bibliographic Details
Main Authors: Lu Shu, Junming Zhang, Fangzheng Peng, Zhiqian Chen
Format: Conference Proceeding
Language:English
Subjects:
Delays
Insulated gate bipolar transistors
Logic gates
Resistance
Switches
Transient analysis
Voltage control
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Description
Summary:To reduce the power dissipation and switching stress of high power IGBTs during switching transient, a new active gate drive method based on voltage controlled current source (VCCS) is proposed in this paper. Compared to the conventional gate drive (CGD) for IGBTs, the proposed current source gate drive (CSD) method achieves faster switching speed and effective control on current overshoot at turn-on and voltage overshoot at turn-off. Thus the capacity utilization of IGBT devices can be improved. The detailed operation principle of the proposed CSD method is presented, and the experiment results based on a 1200V/200A IGBT module are also provided.
ISSN:2329-3721
2329-3748
DOI:10.1109/ECCE.2014.6954158