Micromachined probes for characterization of terahertz devices

The recent development of micromachined probes for on-wafer characterization of devices and circuits now permit measurements to the WR-1.0 waveguide band (0.75-1.1 THz). This paper presents the probe design concept, describes methods for characterizing the probes, and applies the probes for direct o...

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Bibliographic Details
Main Authors: Weikle, Robert M., Barker, N. Scott, Lichtenberger, Arthur W., Bauwens, Matthew F., Alijabbari, Naser
Format: Conference Proceeding
Language:English
Subjects:
Coplanar waveguides
Probes
Scattering parameters
Schottky diodes
Silicon
Transmission line measurements
Online Access:Request full text
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Summary:The recent development of micromachined probes for on-wafer characterization of devices and circuits now permit measurements to the WR-1.0 waveguide band (0.75-1.1 THz). This paper presents the probe design concept, describes methods for characterizing the probes, and applies the probes for direct on-wafer characterization of planar Schottky diodes at 1 THz. Measurements show the WR-1.0 probes exhibit an insertion loss of approximately 7 dB and a return loss greater than 15 dB over 750-1100 GHz band. This is the first demonstration of on-wafer probe measurements above 1 THz.
ISSN:2162-2027
DOI:10.1109/IRMMW-THz.2014.6956029