Investigation of forming nanoclusters of germanium and silicon — germanium solid in LPCVD process

The process of self-organization and evolution of the stable perfectly-ordered nanoclusters of Si, Ge and SiGe solid solution in thin-film deposition process of the germanium-alloyed silicon for the new generation electronic devices is studied.

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Bibliographic Details
Main Authors: Kovalevsky, A. A., Strogova, A. S., Strogova, N. S., Borisevich, V. M.
Format: Conference Proceeding
Language:eng ; rus
Subjects:
Germanium
Online Access:Request full text
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Summary:The process of self-organization and evolution of the stable perfectly-ordered nanoclusters of Si, Ge and SiGe solid solution in thin-film deposition process of the germanium-alloyed silicon for the new generation electronic devices is studied.
DOI:10.1109/CRMICO.2014.6959608