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Reabsorption effects on direct band gap emission from germanium light emitting diodes

The lateral current flow in the lateral light emitting diode can confine carrier distribution near the top surface, and thus relatively stronger direct band gap emission is observed.

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Bibliographic Details
Main Authors: Yen-Yu Chen, Chia-Chun Yen, Yi-Hsin Nien, Wen-Wei Hsu, Qing-Qi Chen, Liu, C. W.
Format: Conference Proceeding
Language:English
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Description
Summary:The lateral current flow in the lateral light emitting diode can confine carrier distribution near the top surface, and thus relatively stronger direct band gap emission is observed.
ISSN:1949-2081
1949-209X
DOI:10.1109/Group4.2014.6961978