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Reabsorption effects on direct band gap emission from germanium light emitting diodes

The lateral current flow in the lateral light emitting diode can confine carrier distribution near the top surface, and thus relatively stronger direct band gap emission is observed.

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Main Authors:	Yen-Yu Chen, Chia-Chun Yen, Yi-Hsin Nien, Wen-Wei Hsu, Qing-Qi Chen, Liu, C. W.
Format:	Conference Proceeding
Language:	English
Subjects:	Current density Electrodes Laser excitation Light emitting diodes Metals Photonic band gap Photonics reabsorption effect
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creator	Yen-Yu Chen Chia-Chun Yen Yi-Hsin Nien Wen-Wei Hsu Qing-Qi Chen Liu, C. W.
description	The lateral current flow in the lateral light emitting diode can confine carrier distribution near the top surface, and thus relatively stronger direct band gap emission is observed.
doi_str_mv	10.1109/Group4.2014.6961978
format	conference_proceeding
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ispartof	11th International Conference on Group IV Photonics (GFP), 2014, p.179-180
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language	eng
recordid	cdi_ieee_primary_6961978
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Current density Electrodes Laser excitation Light emitting diodes Metals Photonic band gap Photonics reabsorption effect
title	Reabsorption effects on direct band gap emission from germanium light emitting diodes
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