Long-wavelength silicon photonic integrated circuits

In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 μm wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating...

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Main Authors: Roelkens, G., Dave, U., Gassenq, A., Hattasan, N., Hu, C., Kuyken, B., Leo, F., Malik, A., Muneeb, M., Ryckeboer, E., Sanchez, D., Uvin, S., Wang, R., Hens, Z., Baets, R., Shimura, Y., Gencarelli, F., Vincent, B., Loo, R., Van Campenhout, J., Cerutti, L., Rodriguez, J. B., Tournie, E., Chen, X., Nedeljkovic, M., Mashanovich, G., Shen, L., Healy, N., Peacock, A., Liu, X., Osgood, R., Green, W. M. J.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Arrayed waveguide gratings
mid-infrared
Silicon photonics
spectroscopy
Waveguide lasers
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Summary:In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 μm wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5-5 μm wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors on this platform is described for the integration of lasers and photodetectors operating in the 2-3 μm wavelength range. GeSn is proposed as an appealing approach to monolithically integrated long-wavelength detectors. Finally, nonlinear optics in silicon waveguide circuits beyond the two-photon absorption threshold is explored.
ISSN:1949-2081
1949-209X
DOI:10.1109/Group4.2014.6962009