90 nm gain extension towards 1.7 μm for diode-pumped silica-based thulium-doped fiber amplifiers

We report the first demonstration of in-band diode-pumped silica-based thulium-doped fiber amplifiers working in the 1.7-1.8 μm waveband. Compared to previously reported results, 90 nm gain extension has been achieved by exploiting novel amplifier designs.

Saved in:
Bibliographic Details
Main Authors: Li, Z., Alam, S. U., Daniel, J. M. O., Shardlow, P. C., Jain, D., Simakov, N., Heidt, A. M., Jung, Y., Sahu, J. K., Clarkson, W. A., Richardson, D. J.
Format: Conference Proceeding
Language:English
Subjects:
Gain
Insertion loss
Noise measurement
Optical fiber amplifiers
Optical fiber communication
Wavelength division multiplexing
Citations: Items that cite this one
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the first demonstration of in-band diode-pumped silica-based thulium-doped fiber amplifiers working in the 1.7-1.8 μm waveband. Compared to previously reported results, 90 nm gain extension has been achieved by exploiting novel amplifier designs.
ISSN:1550-381X
DOI:10.1109/ECOC.2014.6964109