90 nm gain extension towards 1.7 μm for diode-pumped silica-based thulium-doped fiber amplifiers

We report the first demonstration of in-band diode-pumped silica-based thulium-doped fiber amplifiers working in the 1.7-1.8 μm waveband. Compared to previously reported results, 90 nm gain extension has been achieved by exploiting novel amplifier designs.

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Main Authors: Li, Z., Alam, S. U., Daniel, J. M. O., Shardlow, P. C., Jain, D., Simakov, N., Heidt, A. M., Jung, Y., Sahu, J. K., Clarkson, W. A., Richardson, D. J.
Format: Conference Proceeding
Language:English
Subjects:
Gain
Insertion loss
Noise measurement
Optical fiber amplifiers
Optical fiber communication
Wavelength division multiplexing
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cited_by cdi_FETCH-LOGICAL-c138t-3d50ec346f5af43ebbed460a1be3fc69bc9bfec02c20ee88d4a2f4999b52d5753
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creator Li, Z.
Alam, S. U.
Daniel, J. M. O.
Shardlow, P. C.
Jain, D.
Simakov, N.
Heidt, A. M.
Jung, Y.
Sahu, J. K.
Clarkson, W. A.
Richardson, D. J.
description We report the first demonstration of in-band diode-pumped silica-based thulium-doped fiber amplifiers working in the 1.7-1.8 μm waveband. Compared to previously reported results, 90 nm gain extension has been achieved by exploiting novel amplifier designs.
doi_str_mv 10.1109/ECOC.2014.6964109
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Gain
Insertion loss
Noise measurement
Optical fiber amplifiers
Optical fiber communication
Wavelength division multiplexing
title 90 nm gain extension towards 1.7 μm for diode-pumped silica-based thulium-doped fiber amplifiers
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