Demonstration of temperature compensated voltage reference integrated circuit designed with 4H-SiC MESFETs

This work demonstrate for the first time a functional high temperature compensated Voltage Reference integrated circuit (IC) on 4H-SiC material, built with MESFET devices. A special finger type MESFET that overcome the typical embedded drain leakage of finger type MESFET, was developed for this purp...

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Bibliographic Details
Main Authors: Banu, V., Godignon, P., Alexandru, M., Vellvehi, M., Jorda, X., Millan, J.
Format: Conference Proceeding
Language:English
Subjects:
High temperature
Integrated Circuit
Integrated circuits
MESFET
MESFETs
Photonic band gap
Schottky diodes
SiC
Silicon carbide
Temperature measurement
Temperature sensors
Thermal compensated
Voltage reference
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Summary:This work demonstrate for the first time a functional high temperature compensated Voltage Reference integrated circuit (IC) on 4H-SiC material, built with MESFET devices. A special finger type MESFET that overcome the typical embedded drain leakage of finger type MESFET, was developed for this purpose. The schematic and the principle of the circuit is based on a new concept design that avoid the bandgap reference topology and the necessity of using an operational amplifier (OpAmp), which is not yet developed on SiC. The experimental temperature coefficient (TC) is significantly better than a Zener diode and comparable to the normal bandgap voltage references on silicon, but the present circuit has the advantage to be able to work beyond 250 o C. The circuit contains also a linear temperature sensor.
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2014.6966445