Dynamic Modeling of Radiation-Induced State Changes in 2}/\hbox 1T1R RRAM

Single and multiple-event upsets in HfO 2 /Hf one transistor, one resistor (1T1R) resistive random access memory (RRAM) structures are modeled dynamically using 3-D technology computer-aided design (TCAD) simulations. A dynamic single-event compact model is presented that allows direct correlation o...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2014-12, Vol.61 (6), p.3497-3503
Main Authors: Bennett, William G., Hooten, Nicholas C., Schrimpf, Ronald D., Reed, Robert A., Alles, Michael L., En Xia Zhang, Weeden-Wright, Stephanie L., Linten, Dimitri, Jurczak, Malgorzata, Fantini, Andrea
Format: Article
Language:English
Subjects:
Dynamic random access memory (DRAM)
Hafnium
Hafnium oxide
multiple-event upset (MEU)
Nonvolatile memory
nonvolatile memory (NVM)
one resistor (1T1R)
one transistor
Radiation effects
Random access memory
resistive random access memory (RRAM)
Resistors
Single event upsets
single-event upset (SEU)
static random access memory (SRAM)
Transient analysis
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Summary:Single and multiple-event upsets in HfO 2 /Hf one transistor, one resistor (1T1R) resistive random access memory (RRAM) structures are modeled dynamically using 3-D technology computer-aided design (TCAD) simulations. A dynamic single-event compact model is presented that allows direct correlation of the ion-generated voltage transient across the RRAM and the change in RRAM resistance. Experiments and modeling demonstrate an exponential relationship between the susceptibility of the RRAM and the applied voltage. Two implementations of the model are also presented including hardening voltage-susceptible resistive memory technologies and the impact of highly scaled access transistors.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2014.2365493