FET protection of GMR and TMR sensors

TMR and GMR sensors used for reading data written on magnetic media can be damaged by ns wide pulses below 1 Volt. Since diodes turn on around 1 V, they offer little ESD protection. This paper explores the use of diode-connected FETs to protect MR sensors below 1 V.

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Bibliographic Details
Main Authors: Iben, Icko Eric Timothy, Loiseau, Alain, Gebreselasie, Ephrem
Format: Conference Proceeding
Language:English
Subjects:
Electrostatic discharges
Field effect transistors
Magnetic sensors
Resistance
Schottky diodes
Tunneling magnetoresistance
Online Access:Request full text
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Description
Summary:TMR and GMR sensors used for reading data written on magnetic media can be damaged by ns wide pulses below 1 Volt. Since diodes turn on around 1 V, they offer little ESD protection. This paper explores the use of diode-connected FETs to protect MR sensors below 1 V.
ISSN:0739-5159
2164-9340