Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies

We report low-energy proton and low-energy alpha particle SEE data on a 32 nm SOI CMOS SRAM that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2014-12, Vol.61 (6), p.2896-2903
Main Authors: Pellish, Jonathan A., Marshall, Paul W., Rodbell, Kenneth P., Gordon, Michael S., LaBel, Kenneth A., Schwank, James R., Dodds, Nathaniel A., Castaneda, Carlos M., Berg, Melanie D., Kim, Hak S., Phan, Anthony M., Seidleck, Christina M.
Format: Article
Language:English
Subjects:
Alpha particle radiation effects
Alpha particles
Proton radiation effects
Radiation hardening (electronics)
radiation hardness assurance testing
Random access memory
Silicon-on-insulator
silicon-on-insulator technology
Single event upsets
single-event upset
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Summary:We report low-energy proton and low-energy alpha particle SEE data on a 32 nm SOI CMOS SRAM that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 MeV. The importance of low-energy protons to system-level single-event performance is based on the technology under investigation as well as the target radiation environment.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2014.2369171