Cost-Efficient Self-Terminated Write Driver for Spin-Transfer-Torque RAM and Logic

A cost-efficient self-terminated write driver is proposed for low-energy RAM and logic circuits by using spin-transfer-torque (STT)-magnetic tunnel junction (MTJ) devices. Since a bidirectional write current is required for STT switching, data-dependent write-completion monitoring, where the node wi...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2014-11, Vol.50 (11), p.1-4
Main Authors: Suzuki, Daisuke, Natsui, Masanori, Mochizuki, Akira, Hanyu, Takahiro
Format: Article
Language:English
Subjects:
CMOS integrated circuits
Magnetic tunneling
Magnetism
Monitoring
Nonvolatile memory
Random access memory
Switches
Transistors
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Summary:A cost-efficient self-terminated write driver is proposed for low-energy RAM and logic circuits by using spin-transfer-torque (STT)-magnetic tunnel junction (MTJ) devices. Since a bidirectional write current is required for STT switching, data-dependent write-completion monitoring, where the node with large voltage difference between before and after the switching is selectively used, makes it possible to achieve sufficiently large sense margin at any write current directions. By the enhancement of sense margin, write-completion monitoring and self-write-termination circuitries are simplified. Thus, 60% of transistor counts reduction and further robust write-completion detection under process variation are achieved in comparison with those of the prior work.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2014.2322387