A Broadband 220-320 GHz Medium Power Amplifier Module

In this paper, we present the development of an ultra-broadband H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) medium power amplifier (MPA) module for use in next generation high-resolution imaging systems and communication links operating around 300 GHz. Therefore,...

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Bibliographic Details
Main Authors: Tessmann, A., Leuther, A., Hurm, V., Massler, H., Wagner, S., Kuri, M., Zink, M., Riessle, M., Stulz, H.-P, Schlechtweg, M., Ambacher, O.
Format: Conference Proceeding
Language:English
Subjects:
Frequency measurement
Gain
Logic gates
mHEMTs
Power amplifiers
Scattering parameters
Substrates
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Summary:In this paper, we present the development of an ultra-broadband H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) medium power amplifier (MPA) module for use in next generation high-resolution imaging systems and communication links operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been developed by using an advanced 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. A three-stage amplifier S-MMIC based on compact cascode devices was realized, demonstrating a maximum gain of 22.2 dB at 294 GHz and a small-signal gain of more than 16 dB over the frequency range from 184 to 312 GHz. Finally, mounting and packaging of the monolithic amplifier chip into a WR-3.4 waveguide module was accomplished with only minor reduction in circuit performance.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2014.6978532