An enhanced 180nm millimeter-wave SiGe BiCMOS technology with fT/fMAX of 260/350GHz for reduced power consumption automotive radar IC's

Several performance improvements on a 180nm SiGe:C BiCMOS technology targeted for improved millimeter-wave performance are described. SiGe HBT performance metrics, including fT, fMAX, and CML gate delay are improved 20-30%. fT/fMAX of 260/350GHz are achieved with a minimum gate delay of 3.2ps, witho...

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Bibliographic Details
Main Authors: John, J. P., Trivedi, V. P., Kirchgessner, J., Morgan, D., To, I., Welch, P.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
Bipolar transistors
Heterojunction bipolar transistors
Layout
Metals
Millimeter wave technology
Optimization
SiGe
SiGe:C
Silicon bipolar/BiCMOS process technology
Silicon germanium
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Description
Summary:Several performance improvements on a 180nm SiGe:C BiCMOS technology targeted for improved millimeter-wave performance are described. SiGe HBT performance metrics, including fT, fMAX, and CML gate delay are improved 20-30%. fT/fMAX of 260/350GHz are achieved with a minimum gate delay of 3.2ps, without impacting the thermal budget of the technology. BEOL and ground plane optimization reduced transmission line loss to
ISSN:1088-9299
2378-590X
DOI:10.1109/BCTM.2014.6981292